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K6T1008V2C-TB70 Datasheet(PDF) 2 Page - Samsung semiconductor

Part No. K6T1008V2C-TB70
Description  128K x8 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T1008V2C-TB70 Datasheet(HTML) 2 Page - Samsung semiconductor

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K6T1008V2C, K6T1008U2C Family
CMOS SRAM
Revision 2.0
November 1997
2
128K x8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The K6T1008V2C and K6T1008U2C families are fabricated by
SAMSUNG
′s advanced CMOS process technology. The fami-
lies support various operating temperature ranges and have
various package types for user flexibility of system design. The
families also supports low data retention voltage for battery
back-up operation with low data retention current.
FEATURES
• Process Technology: 0.4µm CMOS
• Organization: 128K x8
• Power Supply Voltage:
K6T1008V2C family: 3.0~3.6V
K6T1008U2C family: 2.7~3.3V
• Low Data Retention Voltage: 2V(Min)
• Three state output and TTL Compatible
• Package Type: 32-SOP-525, 32-TSOP1-0820F/R,
32-TSOP1-0813.4F/R
Name
Function
CS1, CS2
Chip Select Inputs
OE
Output Enable Input
WE
Write Enable Input
A0~A16
Address Inputs
I/O1~I/O8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
N.C
No Connection
PRODUCT FAMILY
Product Family
Operating Temperature
Vcc Range
Speed
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
K6T1008V2C-B
Commercial(0~70
°C)
3.0~3.6V
70/100ns
10
µA
35mA
32-SOP
32-TSOP1-F/R
32-sTSOP1-F/R
K6T1008U2C-B
2.7~3.3V
85/100ns
K6T1008V2C-D
Extended(-25~85
°C)
3.0~3.6V
70/100ns
K6T1008U2C-D
2.7~3.3V
85/100ns
K6T1008V2C-F
Industrial(-40~85
°C)
3.0~3.6V
70/100ns
K6T1008U2C-F
2.7~3.3V
85/100ns
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
32-TSOP
Type1-Reverse
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32-STSOP
Type1-Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
A11
A9
A8
WE
A13
CS2
VCC
A15
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Precharge circuit.
Memory array
1024 rows
128
×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A10 A0
A1
A2
A3
A11
A9
I/O1
Data
cont
I/O8
VCC
VSS
A4
A5
A6
A7
A8
A12
A14
A13
A15
A16
CS1
WE
OE
Control
logic
CS2
32-STSOP


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