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K6T1008V2C-TB70 Datasheet(PDF) 1 Page - Samsung semiconductor

Part No. K6T1008V2C-TB70
Description  128K x8 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T1008V2C-TB70 Datasheet(HTML) 1 Page - Samsung semiconductor

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K6T1008V2C, K6T1008U2C Family
CMOS SRAM
Revision 2.0
November 1997
1
Document Title
128K x8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Remark
Preliminary
Final
Final
History
Initial draft
Finalize
- Increased ISB, IDR
Commercial part = 10
µA
Industrial part = 20
µA
Revise
- Change speed bin
KM68V1000C Family: 70/85ns
→ 70/100ns
KM68U1000C Family: 70/100ns
→ 85/100ns
- Improved operating current: 40mA
→ 35mA
- Improved power dissipation
PD: 0.7W
→ 1.0W
- Improved standby current
Extended/Industrial: 20
→ 10µA
- VIL: 0.4V
→ 0.6V
Draft Data
July 3, 1996
December 16, 1996
November 25, 1997
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
Revision No.
0.0
1.0
2.0


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