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K6T1008V2C-TB70 Datasheet(PDF) 6 Page - Samsung semiconductor

Part No. K6T1008V2C-TB70
Description  128K x8 bit Low Power and Low Voltage CMOS Static RAM
Download  11 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T1008V2C-TB70 Datasheet(HTML) 6 Page - Samsung semiconductor

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K6T1008V2C, K6T1008U2C Family
CMOS SRAM
Revision 2.0
November 1997
6
Address
Data Out
Previous Data Valid
Data Valid
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
Data Valid
High-Z
CS1
Address
OE
Data out
NOTES (READ CYCLE)
1.
tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
levels.
2. At any given temperature and voltage condition,
tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
CS2
tOH
tAA
tOLZ
tLZ
tOHZ
tHZ(1,2)
tRC
tCO2
tOE
tCO1


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