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M63992FP Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. M63992FP
Description  HIGH VOLTAGE HALF BRIDGE DRIVER
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M63992FP Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Sep. 2000
MITSUBISHI SEMICONDUCTORS <HVIC>
M63992FP
HIGH VOLTAGE HALF BRIDGE DRIVER
µA
mA
mA
µA
V
V
V
V
µA
µA
V
V
µs
V
V
µs
A
A
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
0.2
0.2
13.8
2.1
0.6
9.5
10.0
9.5
10.0
250
230
250
230
0.5
0.5
14.4
3.0
1.5
25
10.5
11.0
7.5
10.5
11.0
7.5
–2.5
2.5
10
2.5
300
280
20
15
300
280
20
15
1.0
1.0
1.0
100
0.1
4.0
1.9
75
1.0
11.5
12.0
11.5
12.0
13
3.0
350
330
30
25
350
330
30
25
30
30
Floating Supply Leakage Current
VBS standby Current
VCC standby Current
VDD standby Current
High Level Output Voltage
Low Level Output Voltage
High Level Input Threshold Voltage
Low Level Input Threshold Voltage
High Level Input Bias Current
Low Level Input Bias Current
VBS Supply UV Trip Voltage
VBS Supply UV Reset Voltage
VBS Supply UV Filter Time
VCC Supply UV Trip Voltage
VCC Supply UV Reset Voltage
VCC Supply UV Filter Time
Output High Level Short Circuit Pulsed Current
Output Low Level Short Circuit Pulsed Current
Output High Level On resistance
Output Low Level On resistance
High Side Turn-On Propagation Delay
High Side Turn-Off Propagation Delay
High Side Turn-On Rise Time
High Side Turn-Off Fall Time
Low Side Turn-On Propagation Delay
Low Side Turn-Off Propagation Delay
Low Side Turn-On Rise Time
Low Side Turn-Off Fall Time
Delay Matching, High Side and Low Side Turn-On
Delay Matching, High Side and Low Side Turn-Off
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
VB=VS=600V
IO=0A, LO, HO
IO=0A, LO, HO
HIN, LIN
HIN, LIN
VIN=5V
VIN=0V
VO=0V, VIN=5V, PW<10
µs
VO=15V, VIN=0V, PW<10
µs
IO=–200mA, ROH=(VOH-VO)/IO
IO=200mA, ROL=VO/IO
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between HO – VS
CL=1000pF between LO – GND
CL=1000pF between LO – GND
CL=1000pF between LO – GND
CL=1000pF between LO – GND
|tdLH(HO)-tdLH(LO)|
|tdHL(HO)-tdHL(LO)|
IFS
IBS
ICC
IDD
VOH
VOL
VIH
VIL
IIH
IIL
VBSUVT
VBSUVR
tVBSUV
VCCUVT
VCCUVR
tVCCUV
IOH
IOL
ROH
ROL
tdLH(HO)
tdHL(HO)
tr(HO)
tf(HO)
tdLH(LO)
tdHL(LO)
tr(LO)
tf(LO)
tdMon
tdMoff
ELECTRICAL CHARACTERISTICS (Ta=25
°C, VCC=VBS=15V, VDD=5V unless otherwise specified)


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