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M63954P Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. M63954P
Description  HIGH VOLTAGE HALF BRIDGE DRIVER
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M63954P Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Sep. 2000
–0.22
–0.22
40
–0.08
–0.08
3.6
1.0
–0.08
14.4
13
5.5
5
0.5
6
14.4
13
5.5
5
0.5
6
50
50
1.0
1.0
–50
–1
–1
20
14
0
0
–50
–0.5
–0.5
30
3.4
0.8
–0.5
30
1.0
14
10
1.0
14
10
1.0
VLN>VLNTH
VLN>VLNTH, VCC<VUVr
VLN > VLNTH, VLNTH=5V
VAB<VABTH
VAB>VABTH
VCNT=0V
VHGND=600V
C=1000pF
IHO=0mA
IHO=–20mA
IHO=–200mA
IHO=0mA
IHO=20mA
IHO=200mA
ILO=0mA
ILO=–20mA
ILO=–200mA
ILO=0mA
ILO=20mA
ILO=200mA
Amplitude 10%
90%, C=1000pF
Amplitude 90%
10%, C=1000pF
LN Input Voltage Limit
LNTH Input Voltage Limit
LN Offset Voltage
LN Input Leak Current
LNTH Input Leak Current
LNTH Input Hysteresis Current
LN Filter Time
AB Input Voltage Limit
ABTH Input Voltage Limit
AB Offset Voltage
AB Input Leak Current
ABTH Input Leak Current
AB Filter Time
CNT Input Threshold Voltage
CNT Input Hysteresis Voltage
CNT Input Leak Current
CNT Filter Time
Floating Supply Leak Current
Dead Time
Output Rise Time
Output Fall Time
MITSUBISHI SEMICONDUCTORS <HVIC>
M63954P
HIGH VOLTAGE HALF BRIDGE DRIVER
V
V
mV
µA
µA
µA
µs
V
V
mV
µA
µA
µs
V
V
µA
µs
µA
µs
V
V
V
mV
V
V
V
V
V
mV
V
V
ns
ns
VCC–1.5
VCC–1.5
50
80
100
VREG–1.5
VREG–1.5
50
150
3.8
1.2
150
1.0
1.9
100
1.0
12
100
1.0
12
120
120
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
VLN
VLNTH
VLNIO
ILN
ILNTH
ILNTHh
tLN
VAB
VABTH
VABIO
IAB
IABTH
tAB
VCNT
VCNTh
ICNT
tCNT
IRFC
tDEAD
VHOH1
VHOH2
VHOH3
VHOL1
VHOL2
VHOL3
VLOH1
VLOH2
VLOH3
VLOL1
VLOL2
VLOL3
tr
tf
ELECTRICAL CHARACTERISTICS (Ta=25
°C, GND=HGND, VCC=HVCC=15V, unless otherwise specified)
HO Output Voltage
LO Output Voltage
OUTPUT FREQUENCY (RVCO1=15k
Ω, RVCO2=15kΩ, CVCO=100pF)
0.33VREG
0.42VREG
50kHz
60kHz
Oscillation Frequency
VCO Input Voltage
Min.
Typ.
50
60
Max.
Unit
kHz
kHz


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