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ZXMP2120G4 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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ZXMP2120G4 Datasheet(HTML) 1 Page - Zetex Semiconductors |
1 / 6 page SUMMARY V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A SOT23-5 version is also available (ZXMP2120E5). FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT223 package variant engineered to increase spacing between high voltage pins. APPLICATIONS • Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMP2120G4TA 7 12mm embossed 1,000 units ZXMP2120G4TC 13 12mm embossed 4,000 units DEVICE MARKING ZXMP 2120 ZXMP2120G4 ISSUE 1 - DECEMBER 2005 200V P-CHANNEL ENHANCEMENT MODE MOSFET 1 N/C PINOUT - TOP VIEW SOT223 |
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