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ALD114813 Datasheet(PDF) 2 Page - Advanced Linear Devices

Part No. ALD114813
Description  QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAYS
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Maker  ALD [Advanced Linear Devices]
Homepage  http://www.aldinc.com
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ALD114813 Datasheet(HTML) 2 Page - Advanced Linear Devices

   
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ALD114813/ALD114913
Advanced Linear Devices
2
Notes:
1
Consists of junction leakage currents
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage, VDS
10.6V
Gate-Source voltage, VGS
10.6V
Power dissipation
500 mW
Operating temperature range PA, SA, PC, SC package
0°C to +70°C
Storage temperature range
-65°C to +150°C
Lead temperature, 10 seconds
+260°C
OPERATING ELECTRICAL CHARACTERISTICS
V+ = +5V (or open) V- = -5V
TA = 25°C unless otherwise specified
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
ALD114813/ALD114913
Gate Threshold Voltage
VGS(th)
-1.34
-1.30
-1.26
V
IDS =1µA
VDS = 0.1V
Offset Voltage
VOS
720
mV
IDS =1µA
VGS(th)1-VGS(th)2
Offset Voltage Tempco
TCVOS
5
µV/ °CVDS1 = VDS2
GateThreshold Voltage Tempco
TCVGS(th)
-1.7
mV/ °CID= 1µA
0.0
ID= 20µA, VDS = 0.1V
+1.6
ID= 40µA
On Drain Current
IDS (ON)
12.0
mA
VGS = +8.2 V
3.0
VGS = +2.7V
VDS = +5V
Forward Transconductance
GFS
1.4
mmho
VGS = +2.7V
VDS = +7.7V
Transconductance Mismatch
∆GFS
1.8
%
Output Conductance
GOS
68
µmho
VGS =+2.7V
VDS = +7.7V
Drain Source On Resistance
RDS (ON)
500
VDS = 0.1V
VGS = +2.7V
Drain Source On Resistance
RDS (ON)
1.3
KΩ
VDS = 0.1V
VGS = +0.0V
Drain Source On Resistance
∆RDS (ON)
7%
Tolerance
Drain Source On Resistance
∆RDS (ON)
0.5
%
Mismatch
Drain Source Breakdown
BVDSX
10
V
IDS = 1.0µA
Voltage
VGS = -2.3V
Drain Source Leakage Current1
IDS (OFF)
10
100
pA
VGS =-2.3V, VDS =+5V
4nA
TA = 125°C
Gate Leakage Current1
IGSS
330
pA
VDS = 0V VGS = +10V
1nA
TA =125°C
Input Capacitance
CISS
2.5
pF
Transfer Reverse Capacitance
CRSS
0.1
pF
Turn-on Delay Time
ton
10
ns
V+ = 5V RL= 5KΩ
Turn-off Delay Time
toff
10
ns
V+ = 5V RL= 5KΩ
Crosstalk
60
dB
f = 100KHz


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