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ALD114804 Datasheet(PDF) 1 Page - Advanced Linear Devices

Part No. ALD114804
Description  QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD MATCHED PAIR MOSFET ARRAY
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Manufacturer  ALD [Advanced Linear Devices]
Direct Link  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

ALD114804 Datasheet(HTML) 1 Page - Advanced Linear Devices

  ALD114804 Datasheet HTML 1Page - Advanced Linear Devices ALD114804 Datasheet HTML 2Page - Advanced Linear Devices  
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e
EPAD
TM
®
N A
B L
E D
E
ADVANCED
LINEAR
DEVICES, INC.
ORDERING INFORMATION
*N/C pins are internally connected.
Connect to V- to reduce noise
PC, SC PACKAGES
PA, SA PACKAGES
PIN CONFIGURATION
VGS(th)= -0.4V
ALD114804/ALD114804A/ALD114904/ALD114904A
QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®
MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual N-
Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS
technology. These devices are intended for low voltage, small signal applica-
tions. They are excellent functional replacements for normally-closed relay appli-
cations, as they are normally on (conducting) without any power applied, but
could be turned off or modulated when system power supply is turned on. These
MOSFETS have the unique characteristics of, when the gate is grounded, oper-
ating in the resistance mode for low drain voltage levels and in the current source
mode for higher voltage levels and providing a constant drain current.
ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for
exceptional device electrical characteristics matching. As these devices are on
the same monolithic chip, they also exhibit excellent temperature tracking char-
acteristics. They are versatile as design components for a broad range of analog
applications, such as basic building blocks for current sources, differential ampli-
fier input stages, transmission gates, and multiplexer applications.
Besides matched pair electrical characteristics, each individual MOSFET also
exhibits well controlled parameters, enabling the user to depend on tight design
limits corresponding to well matched characteristics.
These depletion mode devices are built for minimum offset voltage and differen-
tial thermal response, and they are suitable for switching and amplifying applica-
tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems
where low input bias current, low input capacitance and fast switching speed are
desired. These devices exhibit well controlled turn-off and sub-threshold
charactersitics and therefore can be used in designs that depend on sub-thresh-
old characteristics.
The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in
precision applications which require very high current gain, beta, such as current
mirrors and current sources. A sample calculation of the DC current gain at a
drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is
recommended that the user, for most applications, connect V+ pin to the most
positive voltage potential (or left open unused) and V- and N/C pins to the most
negative voltage potential in the system. All other pins must have voltages within
these voltage limits.
• Depletion mode (normally ON)
• Precision Gate Threshold Voltages: -0.4V +/- 0.02V
• Nominal RDS(ON) @VGS=0.0V of 5.4KΩ
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Low input capacitance
• VGS(th) match (VOS) — 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents
Operating Temperature Range*
0°C to +70°C0°C to +70°C
16-Pin
16-Pin
8-Pin
8-Pin
Plastic Dip
SOIC
Plastic Dip
SOIC
Package
Package
Package
Package
ALD114804APC ALD114804ASC ALD114904APA ALD114904ASA
ALD114804 PC ALD114804SC
ALD114904PA
ALD114904SA
APPLICATIONS
• Functional replacement of Form B (NC) relays
• Ultra low power (nanowatt) analog and digital
circuits
• Ultra low operating voltage (<0.2V) analog and
digital circuits
• Sub-threshold biased and operated circuits
• Zero power fail safe circuits in alarm systems
• Backup battery circuits
• Power failure and fail safe detector
• Source followers and high impedance buffers
• Precision current mirrors and current sources
• Capacitives probes and sensor interfaces
• Charge detectors and charge integrators
• Differential amplifier input stage
• High side switches
• Peak detectors and level shifters
• Sample and Hold
• Current multipliers
• Discrete analog switches and multiplexers
• Discrete voltage comparators
N/C*
1
2
3
14
15
16
4
13
5
12
N/C*
6
7
8
10
11
GN1
DN1
N/C*
DN4
N/C*
GN4
9
GN3
DN3
DN2
GN2
V+
S34
S12
V-
V+
V-
ALD114804
M 4
M 3
M 1
M 2
V-
V-
V-
V-
V-
GN1
DN1
N/C*
S12
DN2
GN2
ALD114904
1
2
3
6
7
8
4
5
M 1
M 2
V-
N/C*
V-
V-
Rev 1.0-0506 ©2005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286
www.aldinc.com
* Contact factory for industrial temp. range or user-specified threshold voltage values
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