FLASH MEMORY

3

K9F5608D0C

K9F5608Q0C

K9F5608U0C

K9F5616D0C

K9F5616Q0C

K9F5616U0C

GENERAL DESCRIPTION

FEATURES

• Voltage Supply

- 1.8V device(K9F56XXQ0C) : 1.70~1.95V

- 2.65V device(K9F56XXD0C) : 2.4~2.9V

- 3.3V device(K9F56XXU0C) : 2.7 ~ 3.6 V

• Organization

- Memory Cell Array

- X8 device(K9F5608X0C) : (32M + 1024K)bit x 8 bit

- X16 device(K9F5616X0C) : (16M + 512K)bit x 16bit

- Data Register

- X8 device(K9F5608X0C) : (512 + 16)bit x 8bit

- X16 device(K9F5616X0C) : (256 + 8)bit x16bit

• Automatic Program and Erase

- Page Program

- X8 device(K9F5608X0C) : (512 + 16)Byte

- X16 device(K9F5616X0C) : (256 + 8)Word

- Block Erase :

- X8 device(K9F5608X0C) : (16K + 512)Byte

- X16 device(K9F5616X0C) : ( 8K + 256)Word

• Page Read Operation

- Page Size

- X8 device(K9F5608X0C) : (512 + 16)Byte

- X16 device(K9F5616X0C) : (256 + 8)Word

- Random Access

: 10

µs(Max.)

- Serial Page Access : 50ns(Min.)

• Fast Write Cycle Time

- Program time : 200

µs(Typ.)

- Block Erase Time : 2ms(Typ.)

32M x 8 Bit / 16M x 16 Bit NAND Flash Memory

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance

: 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Intelligent Copy-Back

• Unique ID for Copyright Protection

• Power-On Auto-Read Operation

• Safe Lock Mechanism

• Package

- K9F56XXX0C-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F56XXX0C-DCB0/DIB0

63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)

- K9F5608U0C-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F56XXX0C-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F56XXX0C-HCB0/HIB0

63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)

- Pb-free Package

- K9F5608U0C-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F5608U0C-V,F(WSOPI ) is the same device as

K9F5608U0C-Y,P(TSOP1) except package type.

Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V,

3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can

be performed in typical 200

µs on a 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in

typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word.

The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all

program and erase functions including pulse repetition, where required, and internal verification and margining of data.

Even the

write-intensive systems can take advantage of the K9F56XXX0C

′s extended reliability of 100K program/erase cycles by providing

ECC(Error Correcting Code) with real time mapping-out algorithm.

The K9F56XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable

applications requiring non-volatility.

PRODUCT LIST

Part Number

Vcc Range

Organization

PKG Type

K9F5608Q0C-D,H

1.70 ~ 1.95V

X8

TBGA

K9F5616Q0C-D,H

X16

K9F5608D0C-Y,P

2.4 ~ 2.9V

X8

TSOP1

K9F5608D0C-D,H

TBGA

K9F5616D0C-Y,P

X16

TSOP1

K9F5616D0C-D,H

TBGA

K9F5608U0C-Y,P

2.7 ~ 3.6V

X8

TSOP1

K9F5608U0C-D,H

TBGA

K9F5608U0C-V,F

WSOP1

K9F5616U0C-Y,P

X16

TSOP1

K9F5616U0C-D,H

TBGA