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LMX2332LTMX Datasheet(PDF) 7 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2332LTMX
Description  PLLatinumTM Low Power Dual Frequency Synthesizer for RF Personal Communications
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMX2332LTMX Datasheet(HTML) 7 Page - National Semiconductor (TI)

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Charge Pump Current Specification Definitions
01280637
I1 = CP sink current at VDo =VP − ∆V
I2 = CP sink current at VDo =VP/2
I3 = CP sink current at VDo = ∆V
I4 = CP source current at VDo =VP − ∆V
I5 = CP source current at VDo =VP/2
I6 = CP source current at VDo = ∆V
∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to VCC and ground. Typical values are between 0.5V and 1.0V.
Note 6: IDo vs VDo = Charge Pump Output Current magnitude variation vs Voltage =
[12 * {|I1| − |I3|}]/[12 * {|I1| + |I3|}] * 100%
and
[12 * {|I4| − |I6|}]/[12 * {|I4| + |I6|}] * 100%
Note 7: IDo-sink vs IDo-source = Charge Pump Output Current Sink vs Source Mismatch =
[|I2| − |I5|]/[12 * {|I2| + |I5|}] * 100%
Note 8: IDo vs TA = Charge Pump Output Current magnitude variation vs Temperature =
[|I2 @ temp| − |I2 @ 25˚C|]/|I2 @ 25˚C| * 100%
and
[|I5 @ temp| − |I5 @ 25˚C|]/|I5 @ 25˚C| * 100%
www.national.com
7


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