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LMX2332LTMX Datasheet(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part No. LMX2332LTMX
Description  PLLatinumTM Low Power Dual Frequency Synthesizer for RF Personal Communications
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMX2332LTMX Datasheet(HTML) 6 Page - National Semiconductor (TI)

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Electrical Characteristics (Continued)
V
CC = 3.0V, VP = 3.0V; −40˚C < TA < 85˚C, except as specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
t
CWH
Clock Pulse Width High
See Data Input Timing
50
ns
t
CWL
Clock Pulse Width Low
See Data Input Timing
50
ns
t
ES
Clock to Load Enable Set Up Time
See Data Input Timing
50
ns
t
EW
Load Enable Pulse Width
See Data Input Timing
50
ns
Note 3: Clock, Data and LE = GND or Vcc.
Note 4: Clock, Data and LE does not include fIN RF, fIN IF and OSCIN.
Charge Pump Characteristics
V
CC = 3.0V, VP = 3.0V; −40˚C < TA ≤ 85˚C, except as specified
Symbol
Parameter
Conditions
Value
Units
Min
Typ
Max
I
Do-SOURCE
Charge Pump Output
V
Do =VP/2, ICPo = HIGH (Note 5)
−4.0
mA
I
Do-SINK
Current
V
Do =VP/2, ICPo = HIGH (Note 5)
4.0
mA
I
Do-SOURCE
V
Do =VP/2, ICPo = LOW (Note 5)
−1
mA
I
Do-SINK
V
Do =VP/2, ICPo = LOW (Note 5)
1
mA
I
Do-TRI
Charge Pump
0.5V
≤ V
Do ≤ VP − 0.5V
−2.5
2.5
nA
TRI-STATE Current
−40˚C < T
A < 85˚C
I
Do-SINK vs
CP Sink vs
V
Do =VP/2
3
10
%
I
Do-SOURCE
Source Mismatch (Note 7)
T
A = 25˚C
I
Do vs VDo
CP Current vs Voltage
0.5
≤ V
Do ≤ VP − 0.5V
10
15
%
(Note 6)
T
A = 25˚C
I
Do vs TA
CP Current vs
V
Do =VP/2
10
%
Temperature (Note 8)
−40˚C
≤ T
A ≤ 85˚C
Note 5: See PROGRAMMABLE MODES for ICPo description.
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