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1N4148DO34 Datasheet(PDF) 1 Page - DAESAN ELECTRONIC CORP.

Part # 1N4148DO34
Description  SMALL SIGANAL SWITCHING DIODES
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Manufacturer  DAESAN [DAESAN ELECTRONIC CORP.]
Direct Link  https://dec.co.kr/
Logo DAESAN - DAESAN ELECTRONIC CORP.

1N4148DO34 Datasheet(HTML) 1 Page - DAESAN ELECTRONIC CORP.

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1N4148 DO34
SMALL SIGNAL
SWITCHING DIODES
Features
Mechanical Data
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the Mini-MELF case with
the type designation LL4148
· Case: DO-35 glass case
· Polarity: Color band denotes cathode end
· Weight: Approx. 0.13 gram
Maximum Ratings And Electrical Characteristics
Electrical characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbol
Value
Units
Average rectified current, Half wave rectification with
Resistive load at TA=25℃ and F≥50Hz
mA
1501)
Surge forward current at t<1S and TJ=25℃
-65 to +175
Storage temperature range
Reverse Voltage
Volts
75
VR
IAV
IFSM
500
TSTG
Junction temperature
TJ
175
mA
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Peak Reverse Voltage
Volts
100
VRM
Power dissipation at TA=25℃
mW
5001)
Ptot
Symbols
Units
Leakage current
at VR=20V
at VR=75V
at VR=20V, TJ=150℃
nA
Junction Capacitance at VR=VF=0V
IR
IR
IR
CJ
Min.
Thermal resistance, junction to Ambient
Typ.
Max.
25
5
50
4
3501)
K/W
Forward voltage
Volts
1
VF
JA
pF
Reverse Recovery time from IF=10mA to IR=1mA,
VR=6V, RL=100Ω
4
ns
trr
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Voltage rise when switching ON tested with 50mA
pulse tp=0.1μS, Rise time<30μS, fp=5 to 100KHz
Volts
2.5
Vfr
Rectification efficiency at f=100MHz, VRF=2V
0.45
η
Dimensions in inches and (millimeters)
DO-34(GLASS)
1.02(26.0)
MIN.
1.02(26.0)
MIN.
0.106(2.9)
MAX.
0.017(0.42)
MAX.
DIA.
0.79(2.0)
MAX.
DIA.
μA
μA


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