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XN01558 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. XN01558
Description  Silicon NPN epitaxial planar type For low-frequency amplification
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

XN01558 Datasheet(HTML) 1 Page - Panasonic Semiconductor

  XN01558 Datasheet HTML 1Page - Panasonic Semiconductor XN01558 Datasheet HTML 2Page - Panasonic Semiconductor XN01558 Datasheet HTML 3Page - Panasonic Semiconductor  
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Publication date: December 2003
SJJ00264BED
Composite Transistors
XN01558
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• Two elements incorporated into one package
(Emitter-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• 2SD2623 × 2
■ Absolute Maximum Ratings T
a = 25°C
1: Collector (Tr1)
4: Emitter
2: Collector (Tr2)
5: Base (Tr1)
3: Base (Tr2)
EIAJ: SC-74A
Mini5-G1 Package
Unit: mm
2.90
1.9±0.1
0.16
+0.10
–0.06
(0.95) (0.95)
0.30
+0.10
–0.05
5
4
3
1
2
+0.20
–0.05
10˚
2
Tr1
Tr2
4
1
5
3
■ Electrical Characteristics T
a
= 25°C ± 3°C
Internal Connection
Marking Symbol: 4Z
VV
1 k
Ron =
VB × 1 000
(
Ω)
VA − VB
f
= 1 kHz
V
= 0.3 V
VB
IB = 1 mA
V
A
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
25
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
12
V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 µA, I
E
= 025
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 020
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 µA, IC = 012
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 25 V, I
E
= 0
100
nA
Forward current transfer ratio *
1
hFE
VCE = 2 V, IC = 0.5 A
200
800
hFE ratio *
1, 2
hFE(Small
VCE = 2 V, IC = 0.5 A
0.50
0.99
/Large)
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 0.5 A, IB = 20 mA
0.14
0.40
V
Base-emitter saturation voltage *
1
VBE(sat)
IC
= 0.5 A, I
B
= 50 mA
1.2
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
(Common base, input open circuited)
ON resistanse *
3
Ron
1.0
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL
*3: Ron test circuit
STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Ratio between one and another device


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