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PBSS5160K Datasheet(PDF) 7 Page - NXP Semiconductors |
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PBSS5160K Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 14 page 9397 750 15185 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 30 June 2005 7 of 14 Philips Semiconductors PBSS5160K 60 V, 1 A PNP low VCEsat (BISS) transistor VCE = −5V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C VCE = −5V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Base-emitter voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa474 200 400 600 hFE 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) 006aaa476 −0.6 −0.4 −0.8 −1.0 VBE (V) −0.2 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) 006aaa475 IC (mA) −10−1 −104 −103 −1 −102 −10 −10−1 −1 VCEsat (mV) −10−2 (1) (2) (3) 006aaa480 IC (mA) −10−1 −104 −103 −1 −102 −10 −10−1 −1 VCEsat (V) −10−2 (1) (2) (3) |
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