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H5N3011P-E Datasheet(PDF) 1 Page - Renesas Technology Corp |
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H5N3011P-E Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 7 page Rev.2.00, Aug.05.2004, page 1 of 6 H5N3011P Silicon N Channel MOS FET High Speed Power Switching REJ03G0385-0200 Rev.2.00 Aug.05.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P 1 2 3 D S G 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to Source voltage VDSS 300 V Gate to Source voltage VGSS ±30 V Drain current ID 88 A Drain peak current ID (pulse) Note1 176 A Body-Drain diode reverse Drain current IDR 88 A Body-Drain diode reverse Drain peak current IDR (pulse) Note1 176 A Avalanche current IAP Note3 30 A Avalanche energy EAR Note3 54 mJ Channel dissipation Pch Note2 150 W Channel to case thermal impedance θch-c 0.833 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. STch = 25 °C, Tch ≤ 150°C |
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