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H5N3011P Datasheet(PDF) 3 Page - Renesas Technology Corp |
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H5N3011P Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page H5N3011P Rev.2.00, Aug.05.2004, page 3 of 6 Main Characteristics 200 150 100 50 0 50 100 150 200 100 80 60 40 20 0 48 12 16 20 100 80 60 40 20 0 24 68 10 VGS = 5 V 6 V Tc = 75 °C 25 °C −25°C Case Temperature Tc ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Pulse Test Gate to Source Voltage VGS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test 8 V 10 V 6 4 2 0 48 12 16 20 1 30 100 3 10 300 1000 0.02 0.01 0.005 0.1 0.05 0.002 0.001 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 8 ID = 88 A 44 A 20 A Pulse Test VGS = 10 V, 15 V Pulse Test 5.5 V 300 100 30 10 3 1 13 10 30 300 1000 0.3 0.01 0.1 0.03 1000 Drain to Source Voltage VDS (V) Maximum Safe Operation Area 100 Ta = 25 °C 100 µs 1 ms 10 µs Operation in this area is limited by RDS(on) PW = 10 ms (1shot) DC Operation (Tc = 25 °C) |
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