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H5N3011P Datasheet(PDF) 3 Page - Renesas Technology Corp

Part # H5N3011P
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  7 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

H5N3011P Datasheet(HTML) 3 Page - Renesas Technology Corp

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H5N3011P
Rev.2.00, Aug.05.2004, page 3 of 6
Main Characteristics
200
150
100
50
0
50
100
150
200
100
80
60
40
20
0
48
12
16
20
100
80
60
40
20
0
24
68
10
VGS = 5 V
6 V
Tc = 75
°C
25
°C
−25°C
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
8 V
10 V
6
4
2
0
48
12
16
20
1
30
100
3
10
300
1000
0.02
0.01
0.005
0.1
0.05
0.002
0.001
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
8
ID = 88 A
44 A
20 A
Pulse Test
VGS = 10 V, 15 V
Pulse Test
5.5 V
300
100
30
10
3
1
13
10
30
300
1000
0.3
0.01
0.1
0.03
1000
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
100
Ta = 25
°C
100
µs
1 ms
10
µs
Operation in
this area is
limited by RDS(on)
PW = 10 ms
(1shot)
DC Operation
(Tc = 25
°C)


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