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AO4F800 Datasheet(PDF) 4 Page - Alpha & Omega Semiconductors

Part # AO4F800
Description  Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4F800 Datasheet(HTML) 4 Page - Alpha & Omega Semiconductors

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AO4F800
Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)
19
24
VDS=5V, ID=8.8A
1040
180
110
0.7
VGS=10V, VDS=15V, ID=8.8A
VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω
IF=8.8A, dI/dt=100A/µs
IF=8.8A, dI/dt=100A/µs
0
2
4
6
8
10
04
8
12
16
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
40
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Coss
Crss
0.1
1.0
10.0
100.0
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µs
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
10
µs
VDS=15V
ID=8.3A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
f=1MHz
VGS=0V
TJ(Max)=150°C, TA=25°C
Alpha & Omega Semiconductor, Ltd.


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