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AO4614 Datasheet(PDF) 5 Page - Alpha & Omega Semiconductors

Part # AO4614
Description  Complementary Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4614 Datasheet(HTML) 5 Page - Alpha & Omega Semiconductors

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AO4614
Symbol
Min
Typ
Max
Units
BVDSS
-40
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-1
-1.9
-3
V
ID(ON)
-20
A
34.7
45
TJ=125°C
52
65
50.6
63
m
gFS
12
S
VSD
-0.75
-1
V
IS
-3.2
A
Ciss
657
pF
Coss
143
pF
Crss
63
pF
Rg
6.5
Qg(10V)
13.6
nC
Qg(4.5V)
6.8
nC
Qgs
1.8
nC
Qgd
3.9
nC
tD(on)
7.5
ns
tr
6.7
ns
tD(off)
26
ns
tf
11.2
ns
trr
22.3
ns
Qrr
15.2
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
IF=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs
Turn-On DelayTime
VGS=-10V, VDS=-20V, RL=4Ω,
RGEN=3Ω
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
Total Gate Charge (10V)
VGS=-10V, VDS=-20V, ID=-5A
Reverse Transfer Capacitance
Gate resistance
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=-20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
Output Capacitance
VDS=-5V, ID=-4.8A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
VGS=-10V, ID=-5A
m
VGS=-4.5V, ID=-2A
Gate Threshold Voltage
VDS=VGS ID=-250µA
On state drain current
VGS=-10V, VDS=-5V
µA
Gate-Body leakage current
VDS=0V, VGS=±20V
Drain-Source Breakdown Voltage
ID=-10mA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=-32V, VGS=0V
P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005
Alpha & Omega Semiconductor, Ltd.


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