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AO4613L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4613L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  Symbol Max p-channel Units VDS V VGS V IDM IAR A EAR mJ TJ, TSTG °C Symbol Typ Units n-ch 55 62.5 °C/W n-ch 92 110 °C/W RθJL n-ch 37 50 °C/W p-ch 48 62.5 °C/W p-ch 84 110 °C/W RθJL p-ch 37 50 °C/W Thermal Characteristics: n-channel and p-channel -55 to 150 -55 to 150 20 Avalanche Current B Repetitive avalanche energy 0.1mH B 15 11 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A 30 -30 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Max 20 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel W 7.2 6.1 30 2 1.44 -5.1 -6.1 2 1.44 A Continuous Drain Current A TA=25°C ID TA=70°C Pulsed Drain Current B RθJA Maximum Junction-to-Ambient A Steady-State -30 TA=70°C Power Dissipation TA=25°C PD Steady-State Junction and Storage Temperature Range Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s AO4613 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 30V -30V ID = 7.2A (VGS=10V) -6.1A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 40m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) General Description The AO4613 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. It is ESD protected. Standard product AO4613 is Pb-free (meets ROHS & Sony 259 specifications). AO4613L is a Green Product ordering option. AO4613 and AO4613L are electrically identical G1 S1 G2 S2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 SOIC-8 n-channel p-channel G2 D2 S2 G1 D1 S1 Alpha & Omega Semiconductor, Ltd. |
Similar Part No. - AO4613L |
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Similar Description - AO4613L |
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