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AO4612L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4612L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG °C Symbol Device Typ Max Units n-ch 48 62.5 °C/W n-ch 74 110 °C/W RθJL n-ch 35 60 °C/W p-ch 48 62.5 °C/W p-ch 74 110 °C/W RθJL p-ch 35 40 °C/W Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State -20 TA=70°C Power Dissipation TA=25°C PD Steady-State Junction and Storage Temperature Range A Continuous Drain Current A TA=25°C ID TA=70°C Pulsed Drain Current B W 4.5 3.6 20 2 1.28 -2.6 -3.2 2 1.28 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel 60 -60 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Thermal Characteristics: n-channel and p-channel -55 to 150 -55 to 150 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A AO4612 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 60V -60V ID = 4.5A (VGS=10V) -3.2A (VGS = -10V) RDS(ON) RDS(ON) < 56m Ω (VGS=10V) < 105m Ω (VGS = -10V) < 77m Ω (VGS=4.5V) < 135m Ω (VGS = -4.5V) General Description The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard product AO4612 is Pb-free (meets ROHS & Sony 259 specifications). AO4612L is a Green Product ordering option. AO4612 and AO4612L are electrically identical. G1 S1 G2 S2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 SOIC-8 G2 D2 S2 G1 D1 S1 n-channel p-channel Alpha & Omega Semiconductor, Ltd. |
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Similar Description - AO4612L |
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