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AO4610 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4610 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 9 page  Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG °C Symbol VDS IDM TJ, TSTG Junction and Storage Temperature Range Parameter Maximum Schottky Units -55 to 150 -55 to 150 Reverse Voltage 30 V Continuous Forward Current A TA=25°C ID 3 A TA=70°C 2 TA=70°C Power Dissipation TA=25°C PD A Continuous Drain Current A TA=25°C ID TA=70°C Pulsed Drain CurrentB -30 W 8.5 6.6 30 2 1.28 -5.6 -7.1 2 1.28 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel 30 -30 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Pulsed Forward CurrentB 20 Power DissipationA TA=25°C PD 2 W TA=70°C 1.28 Junction and Storage Temperature Range -55 to 150 °C AO4610 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 30V -30V ID = 8.5A(VGS=10V) -7.1A(VGS = -10V) RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 25mΩ (VGS = -10V) < 28mΩ (VGS=4.5V) < 40mΩ (VGS = -4.5V) VF<0.5V@1A General Description The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical. G1 S1 G2 S2/A D1 D1 D2/K D2/K 1 2 3 4 8 7 6 5 SOIC-8 G1 D1 S1 n-channel p-channel G2 D2 S2 K A Alpha & Omega Semiconductor, Ltd. |
Similar Part No. - AO4610 |
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Similar Description - AO4610 |
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