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Document Number 83546

Rev. A3, 18-Mar-03

VISHAY

TCET111.(G)

Vishay Semiconductors

Order Information

G = Lead form 10.16 mm; G is not marked on the body,

4 Pin = Single Channel

Absolute Maximum Ratings

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Emitter

Detector

Coupler

Part

Remarks

TCET1110 (G)

50 to 600 %

TCET1111 (G)

40 to 80 %

TCET1112 (G)

63 to 125 %

TCET1113 (G)

100 to 200 %

TCET1114 (G)

160 to 320 %

TCET1115 (G)

50 to 150 %

TCET1116 (G)

100 to 300 %

TCET1117 (G)

80 to 160 %

TCET1118 (G)

130 to 260 %

TCET1119 (G)

200 to 400 %

Parameter

Test condition

Symbol

Value

Unit

Reverse voltage

6

V

Forward current

60

mA

Forward surge current

1.5

A

Power dissipation

100

mW

Junction temperature

125

°C

Parameter

Test condition

Symbol

Value

Unit

Collector emitter voltage

70

V

Emitter collector voltage

7

V

Collector current

50

mA

Collector peak current

100

mA

Power dissipation

150

mW

Junction temperature

125

°C

Parameter

Test condition

Symbol

Value

Unit

Isolation test voltage (RMS)

t = 1 min

5

kV

Total power dissipation

250

mW

Operating ambient temperature

range

- 40 to + 110

°C

Storage temperature range

- 55 to + 125

°C

Soldering temperature

2 mm from case t

≤ 10 s

260

°C