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AO4902 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4902 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page Symbol Units VDS V VGS V TA=25°C TA=70°C IDM VKA V TA=25°C TA=70°C IFM TA=25°C TA=70°C TJ, TSTG °C Symbol Units RθJL RθJL Maximum Junction-to-Lead C Steady-State Pulsed Forward Current B 71 32 47.5 RθJA 62.5 Maximum Junction-to-Ambient A t ≤ 10s RθJA Maximum Junction-to-Ambient A Steady-State 110 110 Maximum Junction-to-Lead C Steady-State 35 -55 to 150 Typ Maximum Junction-to-Ambient A Steady-State Continuous Forward Current A Parameter: Thermal Characteristics MOSFET Maximum Junction-to-Ambient A t ≤ 10s Parameter -55 to 150 A Absolute Maximum Ratings TA=25°C unless otherwise noted PD ID 3 A 2 40 Continuous Drain Current A Gate-Source Voltage Schottky Drain-Source Voltage IF 40 Thermal Characteristics Schottky 62.5 40 48 74 Max °C/W °C/W MOSFET 30 ±12 6.9 5.8 40 2 Pulsed Drain Current B Junction and Storage Temperature Range 2 W Schottky reverse voltage 30 1.44 1.44 Power Dissipation AO4902 Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode Features VDS (V) = 30V ID = 6.9A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 32mΩ (VGS = 4.5V) RDS(ON) < 50mΩ (VGS = 2.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A General Description The AO4902 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two identical MOSFETs are co-packaged in parallel with a Schottky diode, making them ideal for many bridge and totem pole applications, for e.g. DDR memory.Standard Product AO4902 is Pb-free (meets ROHS & Sony 259 specifications). AO4902L is a Green Product ordering option. AO4902 and AO4902L are electrically identical. SOIC-8 G1 S1/A1 G2 S2/A2 D1/K1 D1/K1 D2/K2 D2/K2 1 2 3 4 8 7 6 5 G1 D1 S1 K1 A1 G2 D2 S2 K2 A2 Alpha & Omega Semiconductor, Ltd. |
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