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AO4817 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO4817 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 4 page  Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 50 62.5 73 110 RθJL 31 40 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±25 Gate-Source Voltage Drain-Source Voltage -30 Continuous Drain Current A Maximum Units Parameter TA=25°C TA=70°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V -6.9 -40 Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range A PD °C 2 1.44 -55 to 150 TA=70°C ID -8 AO4817 Dual P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -8A (VGS = -20V) RDS(ON) < 18mΩ (VGS = -20V) RDS(ON) < 21mΩ (VGS = -10V) ESD Rating: 1.5KV HBM General Description The AO4817 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard Product AO4817 is Pb-free (meets ROHS & Sony 259 specifications). AO4817L is a Green Product ordering option. AO4817 and AO4817L are electrically identical. G1 S1 G2 S2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 SOIC-8 D1 S1 G1 D2 S2 G2 Alpha & Omega Semiconductor, Ltd. |
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