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AO4812 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part No. AO4812
Description  Dual N-Channel Enhancement Mode Field Effect Transistor
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Maker  AOSMD [Alpha & Omega Semiconductors]
Homepage  http://www.aosmd.com
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AO4812 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

   
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AO4812
Symbol
Min
Typ
Max
Units
BVDSS
30
V
0.004
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1
1.9
3
V
ID(ON)
20
A
22.5
28
TJ=125°C
31.3
38
34.5
42
m
gFS
10
15.4
S
VSD
0.76
1
V
IS
3A
Ciss
680
820
pF
Coss
102
pF
Crss
77
pF
Rg
3
3.6
Qg(10V)
13.84
17
nC
Qg(4.5V)
6.74
8.1
nC
Qgs
1.82
nC
Qgd
3.2
nC
tD(on)
4.6
7
ns
tr
4.1
6.2
ns
tD(off)
20.6
30
ns
tf
5.2
7.5
ns
trr
16.5
20
ns
Qrr
7.8
10
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
Total Gate Charge
Gate Source Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=2.2Ω,
RGEN=3Ω
VGS=10V, VDS=15V, ID=6.9A
Gate Drain Charge
Reverse Transfer Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Forward Transconductance
VDS=5V, ID=6.9A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=6.9A
m
VGS=4.5V, ID=5.0A
Gate Threshold Voltage
VDS=VGS ID=250µA
On state drain current
VGS=4.5V, VDS=5V
VDS=24V, VGS=0V
µA
Gate-Body leakage current
VDS=0V, VGS=±20V
IF=6.9A, dI/dt=100A/µs
IF=6.9A, dI/dt=100A/µs
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev 4 : Sept 2005
Alpha & Omega Semiconductor, Ltd.


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