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MRF9030LR1 Datasheet(PDF) 5 Page - Motorola, Inc

Part No. MRF9030LR1
Description  The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF9030LR1 Datasheet(HTML) 5 Page - Motorola, Inc

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5
MRF9030LR1 MRF9030LSR1
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
960
12
20
930
−38
50
IRL
Gps
η
IMD
VDD = 26 Vdc
Pout = 30 W (PEP)
IDQ = 250 mA
Two −Tone, 100 kHz Tone Spac−
ing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
19
45
18
40
17
35
16
−30
15
−32
14
−34
13
−36
955
950
945
940
935
−18
−10
−12
−14
−16
100
17
20
1
IDQ = 375 mA
300 mA
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
19.5
19
18.5
18
17.5
10
250 mA
200 mA
100
−60
−50
1
IDQ = 200 mA
300 mA
VDD = 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
−20
−30
−40
10
375 mA
250 mA
100
−70
0
1
3rd Order
VDD = 26 Vdc
IDQ = 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
10
−10
−20
−30
−40
−50
−60
5th Order
7th Order
100
10
22
0.1
0
60
Gps
η
VDD = 26 Vdc
IDQ = 250 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
20
50
18
40
16
30
14
20
12
10
10
1
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com


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