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AO8814 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part No. AO8814
Description  Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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Maker  AOSMD [Alpha & Omega Semiconductors]
Homepage  http://www.aosmd.com
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AO8814 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

   
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AO8814
Symbol
Min
Typ
Max
Units
BVDSS
20
V
1
TJ=55°C
5
IGSS
10
µA
BVGSO
±12
V
VGS(th)
0.5
0.71
1
V
ID(ON)
30
A
13
16
TJ=125°C
18
22
15
18
m
19
24
m
26
34
m
gFS
30
S
VSD
0.74
1
V
IS
2.5
A
Ciss
1390
pF
Coss
190
pF
Crss
150
pF
Rg
1.5
Qg
15.4
nC
Qgs
1.4
nC
Qgd
4nC
tD(on)
6.2
ns
tr
11
ns
tD(off)
40.5
ns
tf
10
ns
trr
15
ns
Qrr
5.1
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Gate-Source Breakdown Voltage
VDS=0V, IG=±250uA
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=10V, f=1MHz
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=5V, VDS=10V, RL=1.3Ω,
RGEN=3Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=10V, ID=7.5A
Gate Source Charge
m
VGS=2.5V, ID=6A
IS=1A,VGS=0V
VDS=5V, ID=7.5A
VGS=1.8V, ID=5A
VGS=4.5V, ID=7A
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=250µA
VDS=16V, VGS=0V
Zero Gate Voltage Drain Current
VDS=0V, VGS=±10V
Gate-Body leakage current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=4.5V, VDS=5V
VGS=10V, ID=7.5A
Reverse Transfer Capacitance
IF=7.5A, dI/dt=100A/µs
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev 2: June 2005
Alpha & Omega Semiconductor, Ltd.


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