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AO8810 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part No. AO8810
Description  Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
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Maker  AOSMD [Alpha & Omega Semiconductors]
Homepage  http://www.aosmd.com
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AO8810 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

   
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Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
Typ
Max
64
83
89
120
RθJL
53
70
W
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State
°C/W
±8
Gate-Source Voltage
Drain-Source Voltage
20
Continuous Drain
Current
A
Maximum
Units
Parameter
TA=25°C
TA=70°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
V
V
5.7
30
Pulsed Drain Current
B
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
A
PD
°C
1.5
1
-55 to 150
TA=70°C
ID
7
AO8810
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
Features
VDS (V) = 20V
ID = 7 A (VGS = 4.5V)
RDS(ON) < 20mΩ (VGS = 4.5V)
RDS(ON) < 24mΩ (VGS = 2.5V)
RDS(ON) < 32mΩ (VGS = 1.8V)
ESD Rating: 2000V HBM
General Description
The AO8810 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
AO8810L is offered in a lead-free package. Standard
Product AO8810 is Pb-free (meets ROHS & Sony 259
specifications). AO8810L is a Green Product ordering
option. AO8810 and AO8810L are electrically identical.
G1
S1
S1
D1/D2
G2
S2
S2
D1/D2
1
2
3
4
8
7
6
5
TSSOP-8
Top View
G1
D1
S1
G2
D2
S2
Alpha & Omega Semiconductor, Ltd.


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