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AOD607 Datasheet(PDF) 5 Page - Alpha & Omega Semiconductors

Part # AOD607
Description  Complementary Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOD607 Datasheet(HTML) 5 Page - Alpha & Omega Semiconductors

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AOD607
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-0.003
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-1.2
-2
-2.4
V
ID(ON)
-40
A
30
37
TJ=125°C
42
50
50
62
m
gFS
17
S
VSD
-0.76
-1
V
IS
-18
A
Ciss
920
1100
pF
Coss
190
pF
Crss
122
pF
Rg
3.6
5
Qg(10V)
18.7
23
nC
Qg(4.5V)
9.7
11.7
nC
Qgs
2.54
nC
Qgd
5.4
nC
tD(on)
913
ns
tr
25
35
ns
tD(off)
20
30
ns
tf
12
18
ns
trr
21.4
26
ns
Qrr
13
16
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-10V, VDS=-5V
VGS=-10V, ID=-12A
Reverse Transfer Capacitance
IF=-12A, dI/dt=100A/µs
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=-250µA
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
VGS=-4.5V, ID=-5A
IS=-1A,VGS=0V
VDS=-5V, ID=-12A
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V,
RL=1.25Ω, RGEN=3Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
VGS=0V, VDS=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
VGS=-10V, VDS=-15V, ID=-12A
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
Rev0 : March 2006
Alpha & Omega Semiconductor, Ltd.


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