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AOD413Y Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOD413Y Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page  Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 16.7 25 40 50 RθJL 2.5 3 °C V V ±20 25 A -12 30 50 Gate-Source Voltage Drain-Source Voltage -40 Pulsed Drain Current -12 -12 -30 Avalanche Current C Continuous Drain Current B,G Maximum Units Parameter TA=25°C G TA=100°C G Absolute Maximum Ratings TA=25°C unless otherwise noted ID PDSM 2.5 A Repetitive avalanche energy L=0.1mH C mJ Power Dissipation B TC=25°C PD W TC=100°C Maximum Junction-to-Ambient A Steady-State °C/W W TA=70°C 1.6 Junction and Storage Temperature Range -55 to 175 Power Dissipation A TA=25°C Maximum Junction-to-Case C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W AOD413Y P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 45mΩ (VGS = -10V) RDS(ON) < 69mΩ (VGS = -4.5V) General Description The AOD413Y uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard product AOD413Y is Pb free, inside and out. It uses Pb-free die attach and plating material(meets ROHS & Sony 259 specifications). AOD413YL is a Green Product ordering option. AOD413Y and AOD413YL are electrically identical. G D S TO-252 D-PAK Top View Drain Connected to Tab G D S Alpha & Omega Semiconductor, Ltd. |
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Similar Description - AOD413Y |
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