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FDB8876 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDB8876 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDB8876 Rev. A www.fairchildsemi.com 2 Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V IDSS Zero Gate Voltage Drain Current VDS = 24V 1 µA VGS = 0V TA = 150oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA On Characteristics VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V rDS(ON) Drain to Source On Resistance ID = 40A, VGS = 10V - 5.7 8.5 m Ω ID = 40A, VGS = 4.5V - 7.3 10.3 ID = 40, VGS = 10V, TA = 175oC - 11 14 Dynamic Characteristics CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 1700 - pF COSS Output Capacitance - 340 - pF CRSS Reverse Transfer Capacitance - 220 - pF RG Gate Resistance VGS=0.5V, f = 1MHz - 2.1 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V V DD = 15V ID = 40A Ig = 1.0mA - 32 45 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 17 24 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 1.6 2.4 nC Qgs Gate to Sourse Gate Charge - 4.7 - nC Qgs2 Gate Charge Threshold to Plateau - 3.1 - nC Qgd Gate to Drain “Miller” Charge - 6.8 - nC Switching Characteristics (VGS = 10V) tON Turn-On Time VDD = 15V, ID = 40A VGS = 10V, RGS = 10Ω - - 183 ns td(ON) Turn-On Delay Time - 9 - ns tr Rise Time - 113 - ns td(OFF) Turn-Off Delay Time - 50 - ns tf Fall Time - 41 - ns tOFF Turn-Off Time - - 137 ns Drain-Source Diode Characteristic VSD Source to Drain Diode Voltage ISD = 40A - - 1.25 V ISD = 3.2A - - 1.0 V trr Reverse Recovery Time ISD = 40A, dISD/dt=100A/µs - - 22 ns QRR Reverse Recovered Charge ISD = 40A, dISD/dt=100A/µs - - 8 nC Notes: 1: Starting TJ=25OC,L=1mH,IAS=19A,VDD=27V,VGS=10V |
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