SI1557DH datasheet(3/8 Pages) VISHAY

Part #	SI1557DH

Description	N- and P-Channel 1.8-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si1557DH

Vishay Siliconix

New Product

Document Number: 71944

S-21684—Rev. B, 30-Sep-02

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

N−CHANNEL

0

1

2

3

4

0.0

0.5

1.0

1.5

2.0

2.5

0

1

2

3

4

01234

VGS = 5 thru 2.5 V

TC = -55_C

125

_C

2 V

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

1.5 V

1 V

0

20

40

60

80

100

0369

12

0.6

0.8

1.0

1.2

1.4

1.6

-50

-25

0

25

50

75

100

125

150

0

1

2

3

4

5

0.0

0.2

0.4

0.6

0.8

1.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

01234

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 6 V

ID = 1.2 A

ID - Drain Current (A)

VGS = 4.5 V

ID = 1.2 A

VGS = 2.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg - Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

VGS = 4.5 V

VGS = 1.8 V

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