SI1557DH datasheet(2/8 Pages) VISHAY

Part #	SI1557DH

Description	N- and P-Channel 1.8-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si1557DH

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71944

S-21684—Rev. B, 30-Sep-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

VDS = VGS, ID = 100 mA

N-Ch

0.45

1

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -100 mA

P-Ch

-0.45

1

V

"

N-Ch

"100

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

P-Ch

"100

nA

VDS = 9.6 V, VGS = 0 V

N-Ch

1

VDS = -9.6 V, VGS = 0 V

P-Ch

-1

m

Zero Gate Voltage Drain Current

IDSS

VDS = 9.6 V, VGS = 0 V, TJ = 85_C

N-Ch

5

mA

VDS = -9.6 V, VGS = 0 V, TJ = 85_C

P-Ch

-5

VDS w 5 V, VGS = 4.5 V

N-Ch

3

On-State Drain Currenta

ID(on)

VDS p -5 V, VGS = -4.5 V

P-Ch

-2

A

VGS = 4.5 V, ID = 1.2 A

N-Ch

0.195

0.235

VGS = -4.5 V, ID = -0.77 A

P-Ch

0.445

0.535

VGS = 2.5 V, ID = 1.0 A

N-Ch

0.230

0.280

W

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -0.6 A

P-Ch

0.735

0.880

W

VGS = 1.8 V, ID = 0.2 A

N-Ch

0.284

0.340

VGS = -1.8 V, ID = -0.2 A

P-Ch

1.05

1.26

VDS = 5 V, ID = 1.2 A

N-Ch

0.8

Forward Transconductancea

gfs

VDS = -5 V, ID = -0.77 A

P-Ch

1.2

S

IS = 0.39 A, VGS = 0 V

N-Ch

0.8

1.2

Diode Forward Voltagea

VSD

IS = -0.39 A, VGS = 0 V

P-Ch

-0.8

-1.2

V

Dynamicb

N-Ch

0.8

1.2

Total Gate Charge

Qg

N-Channel

P-Ch

1.1

1.8

N-Channel

VDS = 6 V, VGS = 4.5 V, ID = 1.2 A

N-Ch

0.15

Gate-Source Charge

Qgs

P-Channel

P-Ch

0.3

nC

VDS = -6 V, VGS = -4.5 V, ID = -0.1 A

N-Ch

0.20

Gate-Drain Charge

Qgd

P-Ch

0.25

N-Ch

15

25

Turn-On Delay Time

td(on)

P-Ch

17

25

N-Channel

W

N-Ch

25

40

Rise Time

tr

VDD = 6 V, RL = 12 W

ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W

P-Ch

30

45

P-Channel

W

N-Ch

25

40

Turn-Off Delay Time

td(off)

P-Channel

VDD = -6 V, RL = 12 W

I

^ -0.5 A, V

= -4.5 V, R = 6

W

P-Ch

15

25

ns

ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W

N-Ch

10

15

Fall Time

tf

P-Ch

10

15

Source-Drain

IF = 0.39 A, di/dt = 100 A/ms

N-Ch

20

40

Source-Drain

Reverse Recovery Time

trr

IF = -0.39 A, di/dt = 100 A/ms

P-Ch

25

40

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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