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FDY301NZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDY301NZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDY301NZ Rev A www.fairchildsemi.com Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 14 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA VGS = ± 12 V, VDS = 0 V ± 10 µA IGSS Gate–Body Leakage, VGS = ± 4.5 V, VDS = 0 V ± 1 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.6 - 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25 C 2.8 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 200 mA VGS = 2.5 V, ID = 175 mA VGS = 1.8 V, ID = 150 mA VGS = 1.5 V ID = 20 mA VGS = 4.5 V, ID=200mA, TJ = 125°C 5 7 9 10 7 Ω gFS Forward Transconductance VDS = 5 V, ID = 200 mA 1.1 S Dynamic Characteristics Ciss Input Capacitance 60 pF Coss Output Capacitance 20 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V, f = 1.0 MHz 10 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 6 12 ns tr Turn–On Rise Time 8 16 ns td(off) Turn–Off Delay Time 8 16 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 2.4 4.8 ns Qg Total Gate Charge 0.8 1.1 nC Qgs Gate–Source Charge 0.16 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 200 mA, VGS = 4.5 V 0.26 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 150 mA (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time 12 nS Qrr Diode Reverse Recovery Charge IF = 200 mA, dIF/dt = 100 A/µs 3 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 200°C/W when mounted on a 1in2 pad of 2 oz copper b) 280°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. |
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