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FDY100PZ Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDY100PZ Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDY100PZ Rev A www.fairchildsemi.com Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = – 250 µA – 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = – 250 µA, Referenced to 25°C 15 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = – 16 V, VGS = 0 V – 3 µA IGSS Gate–Body Leakage, VGS = ± 8 V, VDS = 0 V ± 10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = – 250 µA – 0.65 –1.0 – 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = – 4.5 V, ID = – 350 mA VGS = – 2.5 V, ID = – 300 mA VGS = – 1.8 V, ID = – 150 mA VGS = – 4.5 V, ID = – 350 mA, TJ =125°C 0.5 0.8 1.3 0.7 1.2 1.6 2.7 1.6 Ω gFS Forward Transconductance VDS = – 5 V, ID = – 350 mA 1 S Dynamic Characteristics Ciss Input Capacitance 100 pF Coss Output Capacitance 30 pF Crss Reverse Transfer Capacitance VDS = – 10 V, V GS = 0 V, f = 1.0 MHz 15 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 6 12 ns tr Turn–On Rise Time 13 23 ns td(off) Turn–Off Delay Time 8 16 ns tf Turn–Off Fall Time VDD = – 10 V, ID = – 0.5 A, VGS = – 4.5 V, RGEN = 6 Ω 1 2 ns Qg Total Gate Charge 1.0 1.4 nC Qgs Gate–Source Charge 0.2 nC Qgd Gate–Drain Charge VDS = – 10 V, ID = – 350 mA, VGS = – 4.5 V 0.3 nC Drain–Source Diode Characteristics and Maximum Ratings VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = – 150 m A(Note 2) –0.8 – 1.2 V trr Diode Reverse Recovery Time 11 ns Qrr Diode Reverse Recovery Charge IF = – 350 mA, dIF/dt = 100 A/µs 2 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 200°C/W when mounted on a 1in2 pad of 2 oz copper b) 280°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. |
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