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FDU6676ASNL Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDU6676ASNL Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 7 page  September 2005 ©2005 Fairchild Semiconductor Corporation FDU6676AS Rev. A(W)) FDU6676AS N-Channel PowerTrench ® SyncFET ™ 30V, 90A, 5.8m Ω General Description The FDU6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDU6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. Applications • DC/DC converter Features • RDS(ON) = 5.8mΩ Max, VGS = 10V • RDS(ON) = 7.3mΩ Max, VGS = 4.5V • High performance trench technology for extremely low RDS(ON) • Low Gate Charge • High power and current handling capability • Includes SyncFET Schottky diode G DS I-PAK (TO-251AA) S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Drain Current –Continuous (Note 1a) 90 ID –Pulsed 100 A Power Dissipation for Single Operation (Note 1) 70 (Note 1a) 3.1 PD (Note 1b) 1.3 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJC Thermal Resistance junction to Case (Note 1) 1.8 RθJA Thermal Resistance junction to Ambient (Note 1a) 45 RθJA Thermal Resistance junction to Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDU6676AS FDU6676AS I-PAK (TO-251) Tube N/A 75 FDU6676AS FDU6676AS_NL (Note 4) I-PAK (TO-251) Tube N/A 75 FDU6676AS FDU6676AS_F071 (Note 5) I-PAK (TO-251) Tube N/A 75 |
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