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TIL111M Datasheet(PDF) 3 Page - Fairchild Semiconductor

Part No. TIL111M
Description  GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

TIL111M Datasheet(HTML) 3 Page - Fairchild Semiconductor

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6/15/05
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© 2005 Fairchild Semiconductor Corporation
GENERAL PURPOSE 6-PIN
PHOTOTRANSISTOR OPTOCOUPLERS
TIL111
TIL111-M
TIL117-M
MOC8100-M
Note
* Typical values at TA = 25°C unless otherwise noted
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter
Test Conditions
Device
Symbol
Min
Typ*
Max
Unit
EMITTER
Input Forward Voltage
(IF = 16 mA)
(TA = 25°C) TIL111/TIL111-M
VF
1.2
1.4
V
(IF = 10 mA; for
MOC8100-M)
(IF = 16 mA; for
TIL117-M)
(TA = 0-70°C)
MOC8100-M/
TIL117-M
1.2
1.4
(TA = -55°C)
1.32
(TA = +100°C)
1.10
Reverse Leakage Current
(VR = 3.0 V)
TIL111/TIL111-M/
TIL117-M
IR
0.001
10
µA
(VR = 6.0V)
MOC8100-M
0.001
10
µA
DETECTOR
Collector-Emitter Breakdown Voltage
(IC = 1.0 mA, IF = 0)
All
BVCEO
30
100
V
Collector-Base Breakdown Voltage
(IC = 10 µA, IF = 0)
All
BVCBO
70
120
V
Emitter-Base Breakdown Voltage
(IE = 10 µA, IF = 0)
All
BVEBO
710
V
Emitter-Collector Breakdown Voltage
(IF = 100µA, IF = 0)
TIL111-M
TIL117-M
BVECO
710
V
Collector-Emitter Dark Current
(VCE = 10 V, IF = 0)
TIL111/TIL111-M/
TIL117-M
ICEO
1
50
nA
(VCE = 5V, TA = 25°C)
MOC8100-M
ICEO
0.5
25
nA
(VCE = 30 V, IF = 0, TA = 70°C)
TIL117-M/
MOC8100-M
ICEO
0.2
50
µA
Collector-Base Dark Current
(VCB = 10 V)
TIL111/TIL111-M/
TIL117-M
ICBO
20
nA
(VCB = 5 V)
MOC8100-M
ICBO
10
nA
Capacitance
(VCE = 0 V, f = 1 MHz)
All
CCE
8pF
ISOLATION CHARACTERISTICS
Characteristic
Test Conditions
Symbol
Min
Typ*
Max
Units
Input-Output Isolation Voltage
(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)
VISO
5300
Vac(rms)
(‘-M’, White Package) (f = 60 Hz, t = 1 sec)
7500
Vac(pk)
Isolation Resistance
(VI-O = 500 VDC)
RISO
1011
Isolation Capacitance
(VI-O = 0, f = 1 MHz)
CISO
2pF


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