©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

FQB3N60C REV. A

January 2006

QFET

TM

FQB3N60C

600V N-Channel MOSFET

Features

• Low gate charge ( typical 10.5 nC)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficiency switched mode power supplies, active power factor

correction, electronic lamp ballasts based on half bridge

topology.

Absolute Maximum Ratings

Thermal Characteristics

S

D

G

FQB Series

GS

D

Symbol

Parameter

FQB3N60C

Unit

Drain-Source Voltage

600

V

Drain Current

3

1.8

A

A

Drain Current

- Pulsed

(Note 1)

12

A

Gate-Source voltage

±30

V

Single Pulsed Avalanche Energy

(Note 2)

150

mJ

Avalanche Current

(Note 1)

3A

Repetitive Avalanche Energy

(Note 1)

7.5

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

- Derate above 25

°C

75

0.62

W

W/

°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Symbol

Parameter

Typ.

Max.

Unit

Thermal Resistance, Junction-to-Case

--

1.67

°C/W

Thermal Resistance, Junction-to-Ambient*

--

40

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)