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FOD814SD Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FOD814SD Datasheet(HTML) 3 Page - Fairchild Semiconductor |
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3 / 12 page  3 www.fairchildsemi.com FOD814 Series, FOD617 Series, FOD817 Series Rev. 1.0.2 Electrical/Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Transfer Characteristics (TA = 25°C Unless otherwise specified.) *Typical values at TA = 25°C Parameter Device Test Conditions Symbol Min Typ* Max Unit EMITTER Forward Voltage FOD814 FOD617 FOD817 (IF = ±20 mA) (IF = 60 mA) (IF = 20 mA) VF — — — 1.2 1.35 1.2 1.4 1.65 1.4 V Reverse Leakage Current FOD617 FOD817 (VR = 6.0 V) (VR = 4.0 V) IR — — 0.001 — 10 10 µA Terminal Capacitance FOD814 FOD617 FOD817 (V = 0, f = 1 kHz) (V = 0, f = 1 kHz) (V = 0, f = 1 kHz) Ct — — — 50 30 30 250 250 250 pF DETECTOR Collector Dark Current FOD814 FOD617C/ D FOD617A/ B FOD817 (VCE = 20 V, IF = 0) (VCE = 10 V, IF = 0) (VCE = 10 V, IF = 0) (VCE = 20 V, IF = 0) ICEO — — — — — 1 1 — 100 100 50 100 nA Collector-Emitter Breakdown Voltage FOD814 FOD617 FOD817 (IC = 0.1 mA, IF = 0) (IC = 100 µA, IF = 0) (IC = 0.1 mA, IF = 0) BVCEO 70 70 70 — — — — — — V Emitter-Collector Breakdown Voltage FOD814 FOD617 FOD817 (IE = 10 µA, IF = 0) (IE = 10 µA, IF = 0) (IE = 10 µA, IF = 0) BVECO 6 7 6 — — — — — — V DC Characteristic Device Test Conditions Symbol Min Typ* Max Unit Current Transfer Ratio FOD814 IF = ±1 mA, VCE = 5 V 1 CTR 20 — 300 % FOD814A 50 150 FOD617A IF = 10 mA, VCE = 5 V 1 40 80 FOD617B 63 125 FOD617C 100 200 FOD617D 160 320 FOD617A IF = 1 mA, VCE = 5 V 1 13 FOD617B 22 FOD617C 34 FOD617D 56 FOD817 IF = 5 mA, VCE = 5 V 1 50 — 600 FOD817A 80 — 160 FOD817B 130 — 260 FOD817C 200 — 400 FOD817D 300 — 600 Collector-Emitter Saturation Voltage FOD814 IF = ±20 mA, IC = 1 mA VCE (sat) — 0.1 0.2 V FOD617 IF = 10 mA, IC = 2.5 mA — — 0.4 FOD817 IF = 20 mA, IC = 1 mA — 0.1 0.2 Cut-Off Frequency FOD814 VCE = 5 V, IC = 2 mA, RL = 100 Ω, -3dB fC 15 80 — KHz |
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