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IXFN21N100Q Datasheet(PDF) 4 Page - IXYS Corporation

Part No. IXFN21N100Q
Description  HiPerFET TM Power MOSFETs Q-Class
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFN21N100Q Datasheet(HTML) 4 Page - IXYS Corporation

  IXFN21N100Q Datasheet HTML 1Page - IXYS Corporation IXFN21N100Q Datasheet HTML 2Page - IXYS Corporation IXFN21N100Q Datasheet HTML 3Page - IXYS Corporation IXFN21N100Q Datasheet HTML 4Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
V
SD - Volts
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
Pulse Width - Seconds
10-4
10-3
10-2
10-1
100
101
0.001
0.010
0.100
1.000
V
DS - Volts
0
5
10
15
20
25
30
35
40
100
1000
10000
Gate Charge - nC
0
40
80
120
160
200
0
2
4
6
8
10
Crss
Coss
V
DS = 500 V
I
D = 21 A
I
G = 10 mA
f = 100kHz
T
J = 125
OC
T
J = 25
OC
Ciss
30000
IXFN 21N100Q
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
Fig.9 Drain Current vs Drain to Source Voltage
Fig.10 Transient Thermal Impedance


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