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L2SA1576AT1 Datasheet(PDF) 1 Page - Leshan Radio Company

Part No. L2SA1576AT1
Description  General Purpose Transistors PNP Silicon
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Maker  LRC [Leshan Radio Company]
Homepage  http://www.lrc.cn/
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L2SA1576AT1 Datasheet(HTML) 1 Page - Leshan Radio Company

   
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L2SA1576A*T1–1/4
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
–50
V
Collector–Base Voltage
V CBO
–60
V
Emitter–Base Voltage
V EBO
–6.0
V
Collector Current — Continuous
I C
–150
mAdc
Collector power dissipation
P C
0.2
W
Junction temperature
T j
150
°C
Storage temperature
T stg
-55 ~+150
°C
DEVICE MARKING
L2SA1576AQT1 =FQ L2SA1576ART1 =FR L2SA1576AST1 =FS
ELECTRICAL CHARACTERISTICS (T
A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V (BR)CEO
– 50
V
(IC = –1 mA)
Emitter–Base Breakdown Voltage
V (BR)EBO
– 6
V
(IE = – 50
µA)
Collector–Base Breakdown Voltage
V (BR)CBO
– 60
V
(IC = – 50
µA)
Collector Cutoff Current
I CBO
– 0.1
µA
(VCB = – 60 V)
Emitter cutoff current
I EBO
– 0.1
µA
(VEB = – 6 V)
Collector-emitter saturation voltage
V CE(sat)
-0.5
V
(IC/IB = – 50 mA / – 5m A)
DC current transfer ratio
h FE
120
––
560
––
(V CE = – 6 V, I C= –1mA)
Transition frequency
f T
140
––
MHz
(V CE = – 12 V, I E= 2mA, f=30MHz )
Output capacitance
C ob
4.0
5.0
pF
(V CB = – 12 V, I E= 0A, f =1MHz )
h FE values are classified as follows:
QR
S
hFE
120~270
180~390
270~560
1
3
2
SC-70/SOT– 323
2
EMITTER
3
COLLECTOR
1
BASE
*
L2SA1576A*T1


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