LESHAN RADIO COMPANY, LTD.

L2N5401

L

2N5401-1/4

PNP Silicon

Amplifier Transistors

L2N5401

TO-92

1 2

3

COLLECTOR

3

2

BASE

1

EMITTER

MAXIMUM RATINGS

Rating

Symbol

2N5401

Unit

Collector − Emitter Voltage

150

Vdc

Collector − Base Voltage

160

Vdc

Emitter − Base Voltage

5.0

Vdc

Collector Current − Continuous

600

mAdc

Total Device Dissipation

Derate above 25

°C

625

5.0

mW

mW/

°C

Total Device Dissipation

Derate above 25

°C

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

−55 to +150

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not nor-

mal operating conditions) and are not valid simultaneously. If these limits are ex-

ceeded, device functional operation is not implied, damage may occur and reli-

ability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

200

°C/W

Thermal Resistance,

Junction−to−Case

83.3

°C/W

2N5401

Y

= Year

WW

= Work Week

YWW

MARKING DIAGRAM