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BC817-16WT1 Datasheet(PDF) 1 Page - Leshan Radio Company

Part No. BC817-16WT1
Description  General Purpose Transistors NPN Silicon
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Manufacturer  LRC [Leshan Radio Company]
Direct Link  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

BC817-16WT1 Datasheet(HTML) 1 Page - Leshan Radio Company

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LESHAN RADIO COMPANY, LTD.
BC817-16WT1–1/2
1
3
2
General Purpose Transistors
Preferred Device
BC817-40YLT1 is LRC
BC817-16WT1
CASE 419-02, STYLE 2
SOT-323 (SC-70)
2
EMITT ER
3
COLLECT OR
1
B ASE
NPN Silicon
MAXIMUM RATINGS
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
45
V
Collector-Base Voltage
VCBO
50
V
Emitter-Base Voltage
VEBO
5V
Collector current-continuoun
IC
500
mAdc
THERMAL CHARATEERISTICS
Symbol
Max
Unit
Total Device Dissipation FR-5 Board, (1)
PD
225
mW
1.8
mW/oC
Thermal Resistance, Junction to Ambient
RθJA
556
oC
/W
PD
300
mW
2.4
mW/oC
Thermal Resistance, Junction to Ambient
RθJA
417
oC
/W
Junction and Storage Temperature
Tj ,Tstg
-55 to +150
oC
DEVICE MARKING
BC817-16WT1=6A
ELECTRICAL CHARACTERISTICS (TA
=25oC unless otherwise noted)
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1)
V(BR)CEO
45
-
-
V
(IC=10mA)
Collector-Emitter Breakdown Voltage
V(BR)CES
50
(IC=10
µ A)
Emitter-Base Breakdown Voltage
V(BR)EBO
5
-
-
V
(IE=10
µ A)
Collector Cutoff Current (VCB=30V)
ICBO
-
-
100
nA
Emitter Cutoff Current (VBE=7V)
IEBO
100
nA
Characteristic
Total Device Dissipation
Derate above 25
oC
Rating
TA=25
oC
Derate above 25
oC
Alumina Substrate, (2) TA=25
oC
Characteristic


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