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LBC856AWT1 Datasheet(PDF) 1 Page - Leshan Radio Company

Part No. LBC856AWT1
Description  General Purpose Transistors PNP Silicon
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Maker  LRC [Leshan Radio Company]
Homepage  http://www.lrc.cn/
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LBC856AWT1 Datasheet(HTML) 1 Page - Leshan Radio Company

   
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LESHAN RADIO COMPANY, LTD.
K6–1/6
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
V CEO
–65
–45
–30
V
Collector–Base Voltage
V CBO
–80
–50
–30
V
Emitter–Base Voltage
V EBO
–5.0
–5.0
–5.0
V
Collector Current — Continuous
I C
–100
–100
–100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
P D
150
mW
TA = 25°C
Thermal Resistance, Junction to Ambient
R θJA
833
°C/W
Junction and Storage Temperature
T J , T stg
–55 to +150
°C
DEVICE MARKING
LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F;
LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (T
A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
– 65
(IC = –10 mA)
V (BR)CEO
– 45
v
– 30
Collector–Emitter Breakdown Voltage
– 80
(IC = –10
µA, V
EB = 0)
V (BR)CES
– 50
v
– 30
Collector–Base Breakdown Voltage
– 80
(IC = – 10
µA)
V (BR)CBO
– 50
v
– 30
Emitter–Base Breakdown Voltage
– 5.0
(IE = – 1.0
µA)
V (BR)EBO
– 5.0
v
– 5.0
Collector Cutoff Current (VCB = – 30 V)
I CBO
– 15
nA
(VCB = – 30 V, TA = 150°C)
– 4.0
µA
1.FR–5=1.0 x 0.75 x 0.062in
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
1
3
2
LBC856AWT1, BWT1
LBC857AWT1, BWT1
LBC858AWT1, BWT1
CWT1
2
EMITTER
3
COLLECTOR
1
BASE
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
SOT– 323 / SC-70
Features
Pb Free Package May be Available. The G.Suffix Denotes a
Pb Free Lead Finish


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