LBC807-16LT1 datasheet(1/3 Pages) LRC

Part #	LBC807-16LT1

Description	General Purpose Transistors PNP Silicon

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Manufacturer	LRC [Leshan Radio Company]

Direct Link	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

LBC807_S-1/3

1

3

2

General Purpose Transistors

LBC807-16LT1

LBC807-25LT1

LBC807-40LT1

SOT–23

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

PNP Silicon

FEATURE

Collector current capability IC = -500 mA.

Collector-emitter voltage VCEO(max) = -45 V.

General purpose switching and amplification.

NPN complement: LBC817 Series.

Pb-Free Package is available.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

LBC807-16LT1

5A

3000/Tape&Reel

LBC807-16LT1G

5A

(Pb-Free)

3000/Tape&Reel

LBC807-25LT1

5B

3000/Tape&Reel

LBC807-25LT1G

5B

(Pb-Free)

3000/Tape&Reel

LBC807-40LT1

5C

3000/Tape&Reel

LBC807-40LT1G

5C

(Pb-Free)

3000/Tape&Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V CEO

–45

V

Collector–Base Voltage

V CBO

–50

V

Emitter–Base Voltage

V EBO

–5.0

V

Collector Current — Continuous

I C

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

TA = 25°C

225

mW

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

556

°C/W

Total Device Dissipation

PD

Alumina Substrate, (2) TA = 25°C

300

mW

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

417

°C/W

Junction and Storage Temperature

T J , T stg

–55 to +150

°C

2

EMITTER

3

COLLECTOR

1

BASE

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