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LMUN5311DW1T1 Datasheet(PDF) 1 Page - Leshan Radio Company

Part No. LMUN5311DW1T1
Description  Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  LRC [Leshan Radio Company]
Homepage  http://www.lrc.cn/
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LMUN5311DW1T1 Datasheet(HTML) 1 Page - Leshan Radio Company

 
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LESHAN RADIO COMPANY, LTD.
LMUN5311DW–1/29
1
3
2
LMUN5311DW1T1
Series
SOT-363/SC-88
6
4
5
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter resistor. These digital tran-
sistors are designed to replace a single device and its external resistor bias network. The BRT
eliminates these individual components by integrating them into a single device. In the
LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
1
3
2
6
4
5
Q1
Q2
R1
R2
R1
R2
XX
MARKING DIAGRAM
13
2
6
4
5
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
xx = Device Marking
= (See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1
and Q 2 , – minus sign for Q 1 (PNP) omitted)
Rating
Symbol Value
Unit
Collector-Base Voltage
V CBO
50
Vdc
Collector-Emitter Voltage
V CEO
50
Vdc
Collector Current
I C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
P D
187 (Note 1.)
mW
T A = 25°C
Derate above 25°C
mW/°C
Thermal Resistance –
R θJA
670 (Note 1.)
°C/W
Junction-to-Ambient
490 (Note 2.)
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T A = 25°C
Derate above 25°C
P D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient
R θJA
493 (Note 1.)
325 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
R θJL
188 (Note 1.)
208 (Note 2.)
°C/W
Junction and Storage
Temperature
T J , T stg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad


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