L9013QLT1 datasheet(1/2 Pages) LRC

Part #	L9013QLT1

Description	General Purpose Transistors NPN Silicon

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Manufacturer	LRC [Leshan Radio Company]

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General Purpose Transistors

NPN Silicon

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

20

V

Collector-Base Voltage

VCBO

40

V

Emitter-Base Voltage

VEBO

5V

Collector current-continuoun

IC

500

mAdc

THERMAL CHARATEERISTICS

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

PD

225

mW

1.8

mW/oC

Thermal Resistance, Junction to Ambient

R θ JA

556

oC

/W

PD

300

mW

2.4

mW/oC

Thermal Resistance, Junction to Ambient

R θJA

417

oC

/W

Junction and Storage Temperature

Tj ,Tstg

-55 to +150

oC

DEVICE MARKING

L9013QLT1=13Q

ELECTRICAL CHARACTERISTICS (TA

=25oC unless otherwise noted)

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

20

-

V

(IC=1.0mA)

Emitter-Base Breakdown Voltage

V(BR)EBO

5

-

V

(IE=100

µA)

Collector-Base Breakdown Voltage

V(BR)CBO

40

-

V

(IC=100

µA)

Collector Cutoff Current (VCB=35V)

ICBO

-

150

nA

Emitter Cutoff Current (VEB=4V)

IEBO

150

nA

Characteristic

Total Device Dissipation

Derate above 25

oC

Rating

TA=25

oC

Derate above 25

oC

Alumina Substrate, (2) TA=25

oC

Characteristic

1

3

2

L901

3*LT1

SOT-23 (TO-236AB)

LESHAN RADIO COMPANY, LTD.

2

EMITTER

3

COLLECTOR

1

BASE

L

9013*LT1–1/2

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