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LMUN5211T1 Datasheet(PDF) 1 Page - Leshan Radio Company

Part No. LMUN5211T1
Description  Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
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Maker  LRC [Leshan Radio Company]
Homepage  http://www.lrc.cn/
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LMUN5211T1 Datasheet(HTML) 1 Page - Leshan Radio Company

 
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LESHAN RADIO COMPANY, LTD.
LMUN5211T1 Series–1/10
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
2
3
1
LMUN5211T1
SERIES
PIN 1
BASE
(INPUT)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
R
1
R
2
MARKINGDIAGRAM
8X
M
8x = Specific Device Code
x = (See Marking Table)
M= Date Code
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network con-
sisting of two resistors; a series base resistor and a base–emitter resistor.
The BRT eliminates these individual components by integrating them into a
single device. The use of a BRT can reduce both system cost and board
space. The device is housed in the SC–70/SOT–323 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using wave or
reflow. The modified gull–winged leads absorb thermal stress
during soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2
of this data sheet.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
P
D
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
mW
mW/
°C
Thermal Resistance –
Junction-to-Ambient
RθJA
618 (Note 1.)
403 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL
280 (Note 1.)
332 (Note 2.)
°C/W
Junction and Storage
Temperature Range
T
J
, Tstg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SC-70 / SOT-323
• Pb-Free package is available


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