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LMUN5211DW1T1 Datasheet(PDF) 3 Page - Leshan Radio Company

Part No. LMUN5211DW1T1
Description  Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
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Maker  LRC [Leshan Radio Company]
Homepage  http://www.lrc.cn/
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LMUN5211DW1T1 Datasheet(HTML) 3 Page - Leshan Radio Company

 
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LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V CB = 50 V, I E = 0)
I CBO
100
nAdc
Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0)
I CEO
500
nAdc
Emitter-Base Cutoff Current
LMUN5211DW1T1
(V EB = 6.0 V, I C = 0)
LMUN5212DW1T1
LMUN5213DW1T1
LMUN5214DW1T1
LMUN5215DW1T1
LMUN5216DW1T1
LMUN5230DW1T1
LMUN5231DW1T1
LMUN5232DW1T1
LMUN5233DW1T1
LMUN5234DW1T1
LMUN5235DW1T1
LMUN5236DW1T1
LMUN5237DW1T1
I EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I C = 10
µA, I E = 0)
V (BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0)
V (BR)CEO
50
Vdc
4. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
LMUN5211DW-3/10
LMUN5211DW1T1
Series


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