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LMUN2237LT1 Datasheet(PDF) 1 Page - Leshan Radio Company |
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LMUN2237LT1 Datasheet(HTML) 1 Page - Leshan Radio Company |
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1 / 4 page  This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count ESD Rating – MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD 230 (Note 1) 338 (Note 2) 1.8 (Note 1) 2.7 (Note 2) mW °C/W Thermal Resistance – Junction-to-Ambient RθJA 540 (Note 1) 370 (Note 2) °C/W Thermal Resistance – Junction-to-Lead RθJL 264 (Note 1) 287 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad PIN 3 COLLECTOR (OUTPUT) PIN 1 EMITTER (GROUND) PIN 2 BASE (INPUT) R1 R2 LESHAN RADIO COMPANY, LTD. LMUN2237LT1 CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN2237LT1-1/4 |
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